onsemi MJF45H11G Transistor, -10 A PNP, -80 V, 3-Pin TO-220
- RS-stocknr.:
- 184-0971
- Fabrikantnummer:
- MJF45H11G
- Fabrikant:
- onsemi
Subtotaal (1 tube van 50 eenheden)*
€ 50,00
(excl. BTW)
€ 60,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 150 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 50 + | € 1,00 | € 50,00 |
*prijsindicatie
- RS-stocknr.:
- 184-0971
- Fabrikantnummer:
- MJF45H11G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Isolated | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Transition Frequency ft | 20MHz | |
| Minimum DC Current Gain hFE | 40 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 36W | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 190μm | |
| Height | 1.18mm | |
| Length | 420μm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Transistor Configuration Isolated | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Transition Frequency ft 20MHz | ||
Minimum DC Current Gain hFE 40 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 36W | ||
Minimum Operating Temperature -55°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 190μm | ||
Height 1.18mm | ||
Length 420μm | ||
Automotive Standard No | ||
- Land van herkomst:
- KR
The Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.
Low Collector-Emitter Saturation Voltage--VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
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