onsemi MUN5333DW1T1G Digital Transistor, 50 V NPN + PNP 100 mA Surface SOT-363, 6-Pin
- RS-stocknr.:
- 184-1345
- Fabrikantnummer:
- MUN5333DW1T1G
- Fabrikant:
- onsemi
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Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
Elk (op een haspel van 3000)
€ 147,00
(excl. BTW)
€ 177,87
(incl. BTW)
- RS-stocknr.:
- 184-1345
- Fabrikantnummer:
- MUN5333DW1T1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-363 | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Mount Type | Surface | |
| Transistor Configuration | Dual | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Maximum Continuous Collector Current Ic | 100mA | |
| Minimum DC Current Gain hFE | 80 | |
| Maximum Power Dissipation Pd | 385mW | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 0.25V | |
| Transistor Polarity | NPN + PNP | |
| Pin Count | 6 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | Pb-Free, RoHS | |
| Length | 2.2mm | |
| Height | 1.1mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-363 | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Mount Type Surface | ||
Transistor Configuration Dual | ||
Maximum Collector Base Voltage VCBO 50V | ||
Maximum Continuous Collector Current Ic 100mA | ||
Minimum DC Current Gain hFE 80 | ||
Maximum Power Dissipation Pd 385mW | ||
Maximum Collector Emitter Saturation Voltage VceSAT 0.25V | ||
Transistor Polarity NPN + PNP | ||
Pin Count 6 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals Pb-Free, RoHS | ||
Length 2.2mm | ||
Height 1.1mm | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
These Devices are PbFree, Halogen Free/BFR Free
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