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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	Digital Transistor
	Mount Type	Surface
	Transistor Polarity	P-Channel
	Maximum Power Dissipation Pd	40W
	Maximum Operating Temperature	150°C
	Pin Count	8
	Series	PowerTrench
	Standards/Approvals	RoHS
	Height	0.72mm
	Length	3.3mm
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type Digital Transistor
	Mount Type Surface
	Transistor Polarity P-Channel
	Maximum Power Dissipation Pd 40W
	Maximum Operating Temperature 150°C
	Pin Count 8
	Series PowerTrench
	Standards/Approvals RoHS
	Height 0.72mm
	Length 3.3mm
	Automotive Standard No

Datasheet FDMC86262P

This P-Channel MOSFET is produced using an advanced PowerTrench® technology. This very high density process is especially tailored to minimize on- state resistance and optimizad for superior switching performance.

Max rDS(on) = 307 mΩ at VGS = -10 V, ID = -2 A

Max rDS(on) = 356 mΩ at VGS = -6 V, ID = -1.8 A

Very Low rDS(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg

Optimised for Fast Switching Applications as well as Load Switch Applications

Applications

Industrial

Portable and Wireless

onsemi Digital Transistor P-Channel Surface, 8-Pin

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