onsemi Digital Transistor, 450 V N-Channel 23 A Surface, 2-Pin
- RS-stocknr.:
- 186-7394
- Fabrikantnummer:
- FGD3245G2-F085
- Fabrikant:
- onsemi
Subtotaal (1 rol van 2500 eenheden)*
€ 2.580,00
(excl. BTW)
€ 3.122,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 december 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 1,032 | € 2.580,00 |
*prijsindicatie
- RS-stocknr.:
- 186-7394
- Fabrikantnummer:
- FGD3245G2-F085
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Transistor Polarity | N-Channel | |
| Maximum Continuous Collector Current Ic | 23A | |
| Maximum Power Dissipation Pd | 150W | |
| Pin Count | 2 | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | EcoSPARK-2 | |
| Height | 2.26mm | |
| Length | 6.73mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Transistor Polarity N-Channel | ||
Maximum Continuous Collector Current Ic 23A | ||
Maximum Power Dissipation Pd 150W | ||
Pin Count 2 | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series EcoSPARK-2 | ||
Height 2.26mm | ||
Length 6.73mm | ||
Automotive Standard AEC-Q101 | ||
The FGB3245G2_F085 and FGD3245G2 are N-channel IGBTs designed in Fairchild's EcoSPARK® 2 technology, which helps in eliminating external protection circuitry. The technology is optimized for driving the coil in the harsh environment of automotive ignition systems and offers outstanding Vsat and SCIS Energy capability also at elevated operating temperatures. The logic level gate input is ESD protected and features an integrated gate resistor. An integrated zener-circuitry clamps the IGBT's collecter- to-emitter voltage at 450 V, which enables systems requiring a higher spark voltage.
SCIS Energy = 320 mJ at TJ = 25°C
Logic Level Gate Drive
Low Saturation Voltage
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