onsemi FDA38N30 Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- RS-stocknr.:
- 186-8119
- Fabrikantnummer:
- FDA38N30
- Fabrikant:
- onsemi
Subtotaal (1 verpakking van 5 eenheden)*
€ 21,38
(excl. BTW)
€ 25,87
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 290 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 4,276 | € 21,38 |
*prijsindicatie
- RS-stocknr.:
- 186-8119
- Fabrikantnummer:
- FDA38N30
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Transistor Polarity | N-Channel | |
| Maximum Power Dissipation Pd | 312W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Length | 16.2mm | |
| Standards/Approvals | RoHS | |
| Height | 18.9mm | |
| Series | UniFETTM MOSFET | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Digital Transistor | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Transistor Polarity N-Channel | ||
Maximum Power Dissipation Pd 312W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Length 16.2mm | ||
Standards/Approvals RoHS | ||
Height 18.9mm | ||
Series UniFETTM MOSFET | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
RDS(on) = 70mΩ ( Typ.)@ VGS = 10V, ID = 19A
Low gate charge ( Typ. 60nC)
Low Crss ( Typ. 60pF)
ESD improved capability
Applications
This product is general usage and suitable for many different applications.
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