onsemi NSS40200LT1G Digital Transistor, -40 V PNP Surface SOT-23, 3-Pin
- RS-stocknr.:
- 186-8585
- Fabrikantnummer:
- NSS40200LT1G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 12,875
(excl. BTW)
€ 15,575
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 825 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 75 | € 0,515 | € 12,88 |
| 100 - 225 | € 0,444 | € 11,10 |
| 250 - 475 | € 0,386 | € 9,65 |
| 500 - 975 | € 0,338 | € 8,45 |
| 1000 + | € 0,309 | € 7,73 |
*prijsindicatie
- RS-stocknr.:
- 186-8585
- Fabrikantnummer:
- NSS40200LT1G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | SOT-23 | |
| Maximum Collector Emitter Voltage Vceo | -40V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -40V | |
| Maximum Emitter Base Voltage VEBO | 7V dc | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 250 | |
| Maximum Power Dissipation Pd | 540mW | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.04mm | |
| Height | 1.1mm | |
| Series | e2PowerEdge | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Digital Transistor | ||
Package Type SOT-23 | ||
Maximum Collector Emitter Voltage Vceo -40V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -40V | ||
Maximum Emitter Base Voltage VEBO 7V dc | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 250 | ||
Maximum Power Dissipation Pd 540mW | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.04mm | ||
Height 1.1mm | ||
Series e2PowerEdge | ||
Automotive Standard AEC-Q101 | ||
Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.
High Current, Low VCE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
Benefits
Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion
Applications
Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays