Fabrikantnummer

STMicroelectronics 2STF2550 Bipolar Transistor, -10 A PNP, -50 V, 4-Pin SOT-89

RS-stocknr.:: 188-8437
Fabrikantnummer:: 2STF2550
Fabrikant:: STMicroelectronics

STMicroelectronics 2STF2550 Bipolar Transistor, -10 A PNP, -50 V, 4-Pin SOT-89

Bulkkorting beschikbaar

Bekijk bulkkorting

Subtotaal (1 verpakking van 25 eenheden)*

€ 11,05

(excl. BTW)

€ 13,38

(incl. BTW)

Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw

Aantal stuks	Per stuk	Per verpakking*
25 - 225	€ 0,442	€ 11,05
250 - 1225	€ 0,275	€ 6,88
1250 - 2475	€ 0,21	€ 5,25
2500 +	€ 0,188	€ 4,70

*prijsindicatie

RS-stocknr.:: 188-8437
Fabrikantnummer:: 2STF2550
Fabrikant:: STMicroelectronics

Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	STMicroelectronics
	Product Type	Bipolar Transistor
	Maximum DC Collector Current Idc	-10A
	Maximum Collector Emitter Voltage Vceo	-50V
	Package Type	SOT-89
	Mount Type	Surface
	Transistor Configuration	Single
	Maximum Transition Frequency ft	1MHz
	Minimum Operating Temperature	-65°C
	Maximum Emitter Base Voltage VEBO	-5V
	Transistor Polarity	PNP
	Minimum DC Current Gain hFE	80
	Maximum Power Dissipation Pd	1.4W
	Pin Count	4
	Maximum Operating Temperature	150°C
	Length	4.6mm
	Height	1.6mm
	Width	2.6mm
	Standards/Approvals	No
	Automotive Standard	No

	Alles selecteren
	Merk STMicroelectronics
	Product Type Bipolar Transistor
	Maximum DC Collector Current Idc -10A
	Maximum Collector Emitter Voltage Vceo -50V
	Package Type SOT-89
	Mount Type Surface
	Transistor Configuration Single
	Maximum Transition Frequency ft 1MHz
	Minimum Operating Temperature -65°C
	Maximum Emitter Base Voltage VEBO -5V
	Transistor Polarity PNP
	Minimum DC Current Gain hFE 80
	Maximum Power Dissipation Pd 1.4W
	Pin Count 4
	Maximum Operating Temperature 150°C
	Length 4.6mm
	Height 1.6mm
	Width 2.6mm
	Standards/Approvals No
	Automotive Standard No

Datasheet 2STF2550

The 2STF2550 and 2STN2550 are PNP transistors manufactured using new “PB-HCD” (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.

Very low collector-emitter saturation voltage

Fast switching speed

High current gain characteristic

Surface mounting devices in medium power SOT-89 and SOT-223 packages

Applications

Emergency lighting

Motherboard and hard disk drive

Mobile equipment

Battery charger

Voltage regulation