Infineon RF Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-343
- RS-stocknr.:
- 259-1416
- Fabrikantnummer:
- BFP196WH6327XTSA1
- Fabrikant:
- Infineon
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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 259-1416
- Fabrikantnummer:
- BFP196WH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum Operating Temperature | -60°C | |
| Maximum Power Dissipation Pd | 700mW | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP196W | |
| Length | 2.1mm | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum Operating Temperature -60°C | ||
Maximum Power Dissipation Pd 700mW | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Transition Frequency ft 7.5GHz | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP196W | ||
Length 2.1mm | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20 mA to 80 mA.
Power amplifier for DECT and PCN systems
Pb-free (RoHS compliant) package
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