Infineon RF Bipolar Transistor, 150 mA NPN, 12 V, 4-Pin SOT-343
- RS-stocknr.:
- 216-8346
- Fabrikantnummer:
- BFP196WNH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 3000 eenheden)*
€ 378,00
(excl. BTW)
€ 456,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 3.000 stuk(s) vanaf 08 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,126 | € 378,00 |
| 6000 - 12000 | € 0,12 | € 360,00 |
| 15000 + | € 0,115 | € 345,00 |
*prijsindicatie
- RS-stocknr.:
- 216-8346
- Fabrikantnummer:
- BFP196WNH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 12V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Silicon Planar Epitaxial Transistor | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Maximum Power Dissipation Pd | 700mW | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP196WN | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 12V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Silicon Planar Epitaxial Transistor | ||
Maximum Collector Base Voltage VCBO 20V | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Transition Frequency ft 7.5GHz | ||
Maximum Power Dissipation Pd 700mW | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP196WN | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon NPN silicon Planar epitaxial transistor in 4-pin dual-emitter SOT343 package for low noise and low distortion wideband amplifiers. This RF transistor benefits from long-term experience in RF components and combines ease-of-use to stable volumes production, at Benchmark quality and reliability.
Pb-free
Halogen-free
Transition frequency of 7.5 GHz
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