Infineon RF Bipolar Transistor, 40 mA NPN, 4.5 V, 4-Pin SOT-343
- RS-stocknr.:
- 273-7298
- Fabrikantnummer:
- BFP410H6327XTSA1
- Fabrikant:
- Infineon
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€ 12,05
(excl. BTW)
€ 14,575
(incl. BTW)
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- Plus verzending 2.725 stuk(s) vanaf 04 mei 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,482 | € 12,05 |
| 50 - 75 | € 0,473 | € 11,83 |
| 100 - 225 | € 0,441 | € 11,03 |
| 250 - 975 | € 0,407 | € 10,18 |
| 1000 + | € 0,399 | € 9,98 |
*prijsindicatie
- RS-stocknr.:
- 273-7298
- Fabrikantnummer:
- BFP410H6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 40mA | |
| Maximum Collector Emitter Voltage Vceo | 4.5V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Minimum DC Current Gain hFE | 60 | |
| Maximum Emitter Base Voltage VEBO | 1.5V | |
| Maximum Transition Frequency ft | 25GHz | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 150mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 40mA | ||
Maximum Collector Emitter Voltage Vceo 4.5V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Minimum DC Current Gain hFE 60 | ||
Maximum Emitter Base Voltage VEBO 1.5V | ||
Maximum Transition Frequency ft 25GHz | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 150mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a low noise device based on a grounded emitter that is part of Infineon established fourth generation RF bipolar transistor family. Its transition frequency fT of 25 GHz and low current characteristics make the device suitable for high frequency oscillators. It remains cost competitive without compromising on ease of use.
High gain
Minimum noise figure
Suitable for broadband low noise amplifiers
LNAs for sub 1 GHz ISM band applications
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