Nexperia PBSS4250X,115 Transistor, 2 A NPN, 50 V, 4-Pin UPAK
- RS-stocknr.:
- 518-1609
- Fabrikantnummer:
- PBSS4250X,115
- Fabrikant:
- Nexperia
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 2,36
(excl. BTW)
€ 2,86
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 390 stuk(s) vanaf 18 november 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 10 | € 0,236 | € 2,36 |
| 20 - 40 | € 0,224 | € 2,24 |
| 50 - 90 | € 0,215 | € 2,15 |
| 100 - 190 | € 0,19 | € 1,90 |
| 200 + | € 0,166 | € 1,66 |
*prijsindicatie
- RS-stocknr.:
- 518-1609
- Fabrikantnummer:
- PBSS4250X,115
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 2A | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Package Type | UPAK | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 50V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 100MHz | |
| Minimum DC Current Gain hFE | 150 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Maximum Power Dissipation Pd | 1W | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 4.6mm | |
| Width | 4.25mm | |
| Series | PBSS4250X | |
| Height | 1.5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 2A | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Package Type UPAK | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 50V | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 100MHz | ||
Minimum DC Current Gain hFE 150 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Maximum Power Dissipation Pd 1W | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 4.6mm | ||
Width 4.25mm | ||
Series PBSS4250X | ||
Height 1.5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.