Nexperia PBSS9110T,215 Transistor, -1 A PNP, -100 V, 3-Pin SOT-23
- RS-stocknr.:
- 518-2135
- Fabrikantnummer:
- PBSS9110T,215
- Fabrikant:
- Nexperia
Afbeelding representeert productcategorie
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 6,75
(excl. BTW)
€ 8,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 1.850 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 6.000 stuk(s) vanaf 08 juli 2026
- Plus verzending 6.000 stuk(s) vanaf 05 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 50 | € 0,27 | € 6,75 |
| 75 - 125 | € 0,243 | € 6,08 |
| 150 + | € 0,216 | € 5,40 |
*prijsindicatie
- RS-stocknr.:
- 518-2135
- Fabrikantnummer:
- PBSS9110T,215
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -1A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 120V | |
| Maximum Emitter Base Voltage VEBO | 5V | |
| Minimum DC Current Gain hFE | 125 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 480mW | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 100MHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Series | PBSS9110T | |
| Standards/Approvals | No | |
| Length | 3mm | |
| Height | 1.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -1A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 120V | ||
Maximum Emitter Base Voltage VEBO 5V | ||
Minimum DC Current Gain hFE 125 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 480mW | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 100MHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Series PBSS9110T | ||
Standards/Approvals No | ||
Length 3mm | ||
Height 1.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
Low Saturation Voltage PNP Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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