onsemi MJD253T4G Transistor, -4 A PNP, -100 V, 3-Pin DPAK
- RS-stocknr.:
- 790-5337
- Fabrikantnummer:
- MJD253T4G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 10 eenheden)*
€ 3,74
(excl. BTW)
€ 4,53
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Beperkte voorraad
- Plus verzending 60 stuk(s) vanaf 31 augustus 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 - 90 | € 0,374 | € 3,74 |
| 100 - 240 | € 0,323 | € 3,23 |
| 250 - 490 | € 0,28 | € 2,80 |
| 500 - 990 | € 0,246 | € 2,46 |
| 1000 + | € 0,224 | € 2,24 |
*prijsindicatie
- RS-stocknr.:
- 790-5337
- Fabrikantnummer:
- MJD253T4G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -4A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 10MHz | |
| Minimum DC Current Gain hFE | 40 | |
| Transistor Polarity | PNP | |
| Maximum Power Dissipation Pd | 12.5W | |
| Maximum Emitter Base Voltage VEBO | 7V | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Width | 0.09mm | |
| Series | MJD253 | |
| Standards/Approvals | No | |
| Length | 0.27mm | |
| Height | 0.63mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -4A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 10MHz | ||
Minimum DC Current Gain hFE 40 | ||
Transistor Polarity PNP | ||
Maximum Power Dissipation Pd 12.5W | ||
Maximum Emitter Base Voltage VEBO 7V | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Width 0.09mm | ||
Series MJD253 | ||
Standards/Approvals No | ||
Length 0.27mm | ||
Height 0.63mm | ||
Automotive Standard AEC-Q101 | ||
PNP Power Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with NSV prefix are automotive qualified to AEC-Q101 standard.
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