Nexperia PBHV8118T,215 Transistor, 1 A NPN, 180 V, 3-Pin SOT-23
- RS-stocknr.:
- 816-0649
- Fabrikantnummer:
- PBHV8118T,215
- Fabrikant:
- Nexperia
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 816-0649
- Fabrikantnummer:
- PBHV8118T,215
- Fabrikant:
- Nexperia
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 1A | |
| Maximum Collector Emitter Voltage Vceo | 180V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 400V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum DC Current Gain hFE | 100 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 300mW | |
| Maximum Transition Frequency ft | 100MHz | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 6.7mm | |
| Standards/Approvals | RoHS | |
| Width | 7.3mm | |
| Series | PBHV8118T | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 1A | ||
Maximum Collector Emitter Voltage Vceo 180V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 400V | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum DC Current Gain hFE 100 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 300mW | ||
Maximum Transition Frequency ft 100MHz | ||
Pin Count 3 | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 6.7mm | ||
Standards/Approvals RoHS | ||
Width 7.3mm | ||
Series PBHV8118T | ||
Automotive Standard AEC-Q101 | ||
- Land van herkomst:
- CN
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in Compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
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