onsemi TIP117G PNP Darlington Transistor, 2 (Continuous) A, 4 (Peak) A 100 V dc HFE:500, 3-Pin TO-220

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RS-stocknr.:
184-1112
Fabrikantnummer:
TIP117G
Fabrikant:
onsemi
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Transistor Type

PNP

Maximum Continuous Collector Current

2 (Continuous) A, 4 (Peak) A

Maximum Collector Emitter Voltage

100 V dc

Maximum Emitter Base Voltage

5 V dc

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Transistor Configuration

Single

Configuration

Single

Number of Elements per Chip

1

Minimum DC Current Gain

500

Maximum Collector Base Voltage

100 V dc

Maximum Collector Emitter Saturation Voltage

2.5 V dc

Maximum Collector Cut-off Current

2mA

Base Current

50mA

Maximum Operating Temperature

+150 °C

Length

10.53mm

Minimum Operating Temperature

-65 °C

Maximum Power Dissipation

50 W

Dimensions

10.53 x 4.83 x 15.75mm

Width

4.83mm

Height

15.75mm

Land van herkomst:
CN
The Darlington Bipolar Power Transistor is designed for general purpose amplifier and low speed switching applications. The TIP110, TIP111, TIP112 (NPN), TIP115, TIP116, TIP117 (PNP) are complementary devices.

High DC Current Gain - hFE = 2500 (typ) @ IC = 1.0 Adc
Collector-Emitter Sustaining Voltage @ 30 mA
VCEO(sus) = 60 Vdc (Min) TIP110, TIP115
VCEO(sus) = 80 Vdc (Min) TIP111, TIP116
VCEO(sus) = 100 Vdc (Min) TIP112, TIP117
Low Collector-Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (Max) @ IC= 2.0 Adc
= 4.0 Vdc (Max) @ IC= 5.0 Adc
Monolithic Construction with Built-In Base-Emitter Shunt Resistors
Compact TO-220 AB Package
Pb-Free Packages are Available

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