onsemi MJ11012G Dual NPN Darlington Transistor, 30 A 60 V HFE:200, 2-Pin TO-204AA
- RS-stocknr.:
- 862-4954
- Fabrikantnummer:
- MJ11012G
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 14,51
(excl. BTW)
€ 17,558
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 2 stuk(s) klaar voor verzending
- 8 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 26 stuk(s) vanaf 12 december 2025
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 7,255 | € 14,51 |
| 20 + | € 6,25 | € 12,50 |
*prijsindicatie
- RS-stocknr.:
- 862-4954
- Fabrikantnummer:
- MJ11012G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Transistor Type | NPN | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 60 V | |
| Maximum Emitter Base Voltage | 5 V | |
| Package Type | TO-204AA | |
| Mounting Type | Through Hole | |
| Pin Count | 2 | |
| Transistor Configuration | Single | |
| Number of Elements per Chip | 2 | |
| Minimum DC Current Gain | 200 | |
| Maximum Base Emitter Saturation Voltage | 5 V | |
| Maximum Collector Base Voltage | 60 V | |
| Maximum Collector Emitter Saturation Voltage | 4 V | |
| Height | 8.51mm | |
| Dimensions | 21.08 (Dia.) x 8.51mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Power Dissipation | 200 W | |
| Maximum Operating Temperature | +200 °C | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Transistor Type NPN | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 60 V | ||
Maximum Emitter Base Voltage 5 V | ||
Package Type TO-204AA | ||
Mounting Type Through Hole | ||
Pin Count 2 | ||
Transistor Configuration Single | ||
Number of Elements per Chip 2 | ||
Minimum DC Current Gain 200 | ||
Maximum Base Emitter Saturation Voltage 5 V | ||
Maximum Collector Base Voltage 60 V | ||
Maximum Collector Emitter Saturation Voltage 4 V | ||
Height 8.51mm | ||
Dimensions 21.08 (Dia.) x 8.51mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Power Dissipation 200 W | ||
Maximum Operating Temperature +200 °C | ||
NPN Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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