Microchip AT28HC256-12JU, 256 kB Parallel EEPROM, 120 ns 32-Pin PLCC Parallel
- RS-stocknr.:
- 177-1707
- Fabrikantnummer:
- AT28HC256-12JU
- Fabrikant:
- Microchip
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|---|---|
| 1 - 24 | € 11,68 |
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*prijsindicatie
- RS-stocknr.:
- 177-1707
- Fabrikantnummer:
- AT28HC256-12JU
- Fabrikant:
- Microchip
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Microchip | |
| Product Type | Parallel EEPROM | |
| Memory Size | 256kB | |
| Interface Type | Parallel | |
| Package Type | PLCC | |
| Mount Type | Surface | |
| Pin Count | 32 | |
| Maximum Clock Frequency | 5MHz | |
| Organisation | 32K x 8 bit | |
| Minimum Supply Voltage | 4.5V | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Width | 15mm | |
| Standards/Approvals | No | |
| Series | AT28HC256 | |
| Height | 3.5mm | |
| Length | 12.5mm | |
| Data Retention | 10year | |
| Supply Current | 80mA | |
| Maximum Random Access Time | 120ns | |
| Number of Words | 32768 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Microchip | ||
Product Type Parallel EEPROM | ||
Memory Size 256kB | ||
Interface Type Parallel | ||
Package Type PLCC | ||
Mount Type Surface | ||
Pin Count 32 | ||
Maximum Clock Frequency 5MHz | ||
Organisation 32K x 8 bit | ||
Minimum Supply Voltage 4.5V | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Width 15mm | ||
Standards/Approvals No | ||
Series AT28HC256 | ||
Height 3.5mm | ||
Length 12.5mm | ||
Data Retention 10year | ||
Supply Current 80mA | ||
Maximum Random Access Time 120ns | ||
Number of Words 32768 | ||
Automotive Standard No | ||
- Land van herkomst:
- TW
The Microchip AT28HC256 is a high-performance 256Kbit Parallel EEPROM available in both Industrial and Military temp ranges, offering access times to 70ns with power dissipation of 440mW. Deselected, CMOS standby current is less than 5mA. Accessed like static RAM for the read or write cycle without external components, it contains a 64-byte page register to allow writing of up to 64 bytes simultaneously. Features an internal Error Correction Circuit for extended endurance and improved data retention, in Military version. Optional Software Data Protection mechanism guards against inadvertent writes, and an extra 64 bytes of EEPROM enables device identification or tracking.
Additional Features:
32 Kbits x 8 (256 Kbit)
5V ± 10% Supply
Parallel Interface
150ns access time
self-Timed Erase and Write Cycles (10 ms max)
Page Write and Byte Write
Data Polling for end of write detection
Low Power Consumption:
Read / Write current 40 mA (Max)
Standby current TTL 2 mA (Max), CMOS 200 μA (Max)
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