Infineon 4 kB FRAM 8-Pin SOIC, FM24C04B-GTR
- RS-stocknr.:
- 215-5779
- Fabrikantnummer:
- FM24C04B-GTR
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 5 eenheden)*
€ 6,82
(excl. BTW)
€ 8,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 4.035 stuk(s) vanaf 01 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 + | € 1,364 | € 6,82 |
*prijsindicatie
- RS-stocknr.:
- 215-5779
- Fabrikantnummer:
- FM24C04B-GTR
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 10ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 1MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | No | |
| Height | 1.48mm | |
| Length | 4.97mm | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 4.5V | |
| Number of Words | 512 | |
| Maximum Supply Voltage | 5.5V | |
| Automotive Standard | AEC-Q100 | |
| Minimum Operating Temperature | -40°C | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 10ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 1MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals No | ||
Height 1.48mm | ||
Length 4.97mm | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 4.5V | ||
Number of Words 512 | ||
Maximum Supply Voltage 5.5V | ||
Automotive Standard AEC-Q100 | ||
Minimum Operating Temperature -40°C | ||
The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other non-volatile memories.
4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
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