Infineon 256 kB FRAM 28-Pin SOIC-28, FM18W08-SGTR
- RS-stocknr.:
- 273-5303
- Fabrikantnummer:
- FM18W08-SGTR
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 9.619,00
(excl. BTW)
€ 11.639,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 18 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 9,619 | € 9.619,00 |
*prijsindicatie
- RS-stocknr.:
- 273-5303
- Fabrikantnummer:
- FM18W08-SGTR
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | FRAM | |
| Memory Size | 256kB | |
| Organisation | 32k x 8 bit | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 70ns | |
| Mount Type | Surface | |
| Package Type | SOIC-28 | |
| Pin Count | 28 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Number of Words | 32k | |
| Automotive Standard | No | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 5.5V | |
| Minimum Operating Temperature | -40°C | |
| Minimum Supply Voltage | 2.7V | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type FRAM | ||
Memory Size 256kB | ||
Organisation 32k x 8 bit | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 70ns | ||
Mount Type Surface | ||
Package Type SOIC-28 | ||
Pin Count 28 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Number of Words 32k | ||
Automotive Standard No | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 5.5V | ||
Minimum Operating Temperature -40°C | ||
Minimum Supply Voltage 2.7V | ||
The Infineon FRAM Memory is a 32 K x 8 non volatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or FRAM is non volatile, which means that detail retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery backed SRAM. Fast write timing and high write endurance make the FRAM superior to other types of memory.
RoHS compliant
Low power consumption
SRAM and EEPROM compatible
Superior to battery backed SRAM modules
Resistant to negative voltage undershoots
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