STMicroelectronics L6385ED013TR High Side Gate Driver 2, 650 mA 8-Pin 17 V, SO-8
- RS-stocknr.:
- 152-012
- Fabrikantnummer:
- L6385ED013TR
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 rol van 5 eenheden)*
€ 5,29
(excl. BTW)
€ 6,40
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 5 - 45 | € 1,058 | € 5,29 |
| 50 - 95 | € 1,006 | € 5,03 |
| 100 - 495 | € 0,932 | € 4,66 |
| 500 - 995 | € 0,856 | € 4,28 |
| 1000 + | € 0,828 | € 4,14 |
*prijsindicatie
- RS-stocknr.:
- 152-012
- Fabrikantnummer:
- L6385ED013TR
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | Gate Driver Module | |
| Output Current | 650mA | |
| Pin Count | 8 | |
| Fall Time | 30ns | |
| Package Type | SO-8 | |
| Driver Type | High Side | |
| Rise Time | 50ns | |
| Minimum Supply Voltage | 17V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 17V | |
| Minimum Operating Temperature | -50°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | L6385ED013TR | |
| Mount Type | Surface | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type Gate Driver Module | ||
Output Current 650mA | ||
Pin Count 8 | ||
Fall Time 30ns | ||
Package Type SO-8 | ||
Driver Type High Side | ||
Rise Time 50ns | ||
Minimum Supply Voltage 17V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 17V | ||
Minimum Operating Temperature -50°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series L6385ED013TR | ||
Mount Type Surface | ||
- Land van herkomst:
- CN
The STMicroelectronics simple and Compact high voltage gate driver, manufactured with the BCD offline technology, and able to drive a half-bridge of power MOSFET or IGBT devices. The high-side (floating) section is able to work with voltage rail up to 600 V. Both device outputs can independently sink and source 650 mA and 400 mA respectively and can be simultaneously driven high in order to drive asymmetrical half bridge configurations.
Undervoltage lockout on lower and upper driving section
Internal bootstrap diode
Outputs in phase with inputs
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