onsemi, IGBT 2, 1.9 A 8-Pin 20 V, SOIC
- RS-stocknr.:
- 221-6667
- Fabrikantnummer:
- NCV57201DR2G
- Fabrikant:
- onsemi
Subtotaal (1 rol van 2500 eenheden)*
€ 1.417,50
(excl. BTW)
€ 1.715,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 01 juli 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,567 | € 1.417,50 |
*prijsindicatie
- RS-stocknr.:
- 221-6667
- Fabrikantnummer:
- NCV57201DR2G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT Module | |
| Output Current | 1.9A | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Number of Outputs | 2 | |
| Driver Type | IGBT | |
| Rise Time | 13ns | |
| Minimum Supply Voltage | 20V | |
| Maximum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Height | 1.75mm | |
| Length | 5mm | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT Module | ||
Output Current 1.9A | ||
Pin Count 8 | ||
Package Type SOIC | ||
Number of Outputs 2 | ||
Driver Type IGBT | ||
Rise Time 13ns | ||
Minimum Supply Voltage 20V | ||
Maximum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Width 4 mm | ||
Height 1.75mm | ||
Length 5mm | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCx57201 is a high voltage gate driver with one non−isolated low side gate driver and one galvanically isolated high or low side gate driver. It can directly drive two IGBTs in a half bridge configuration. It isolated high side driver can be powered with an isolated power supply or with bootstrap technique from the low side power supply. The galvanic isolation for the high side gate driver guarantees reliable switching in high power applications for IGBTs that operate up to 800 V, at high dv/dt.
Matched propagation delay 90 ns
Built−in 20 ns minimum pulse width filter
Non−inverting output signal
CMTI up to 100 kV/s
Reliable operation for VS negative swing to −800 V