STMicroelectronics STGB3NC120HDT4, N-Channel IGBT, 14 A 1200 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 151-939
- Fabrikantnummer:
- STGB3NC120HDT4
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
Sorry, we weten niet wanneer dit weer voorradig zal zijn.
- RS-stocknr.:
- 151-939
- Fabrikantnummer:
- STGB3NC120HDT4
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 14A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 15ns | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.8V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1mm | |
| Width | 4.4mm | |
| Standards/Approvals | No | |
| Length | 16mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 14A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 15ns | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.8V | ||
Maximum Operating Temperature 150°C | ||
Height 1mm | ||
Width 4.4mm | ||
Standards/Approvals No | ||
Length 16mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics IGBT shows an excellent trade off between low conduction losses and fast switching performance. It is designed in Power MESH technology combined with high voltage ultrafast diode.
High voltage capability
High speed
Very soft ultrafast recovery anti parallel diode
Gerelateerde Links
- STMicroelectronics STGB3NC120HDT4 14 A 1200 V Surface
- onsemi 35 A 1200 V Surface
- onsemi HGT1S10N120BNST 35 A 1200 V Surface
- STMicroelectronics 30 A 420 V Surface
- STMicroelectronics 20 A 600 V Surface
- STMicroelectronics 25 A 450 V Surface
- STMicroelectronics 50 A 650 V Surface
- STMicroelectronics 10 A 375 V Surface