IXYS IXGT30N120B3D1, Type N-Channel IGBT, 50 A 1200 V, 3-Pin TO-268, Through Hole

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€ 18,33

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€ 22,18

(incl. BTW)

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RS-stocknr.:
192-635
Artikelnummer Distrelec:
302-53-420
Fabrikantnummer:
IXGT30N120B3D1
Fabrikant:
IXYS
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IXYS

Maximum Continuous Collector Current Ic

50A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

300W

Package Type

TO-268

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

160ns

Maximum Collector Emitter Saturation Voltage VceSAT

3.5V

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

150°C

Series

Mid-Frequency

Standards/Approvals

RoHS

Automotive Standard

No

IGBT Discretes, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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