IXYS IXGH40N120B2D1, Type N-Channel IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 192-988
- Artikelnummer Distrelec:
- 302-53-416
- Fabrikantnummer:
- IXGH40N120B2D1
- Fabrikant:
- IXYS
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€ 17,54
(excl. BTW)
€ 21,22
(incl. BTW)
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|---|---|
| 1 - 4 | € 17,54 |
| 5 - 19 | € 15,10 |
| 20 - 49 | € 14,45 |
| 50 - 99 | € 12,59 |
| 100 + | € 12,29 |
*prijsindicatie
- RS-stocknr.:
- 192-988
- Artikelnummer Distrelec:
- 302-53-416
- Fabrikantnummer:
- IXGH40N120B2D1
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 380W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 140ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.5V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | Mid-Frequency | |
| Standards/Approvals | RoHS | |
| Length | 19.81mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 380W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 140ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 3.5V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series Mid-Frequency | ||
Standards/Approvals RoHS | ||
Length 19.81mm | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.