ROHM, N-Channel IGBT, 8 A 650 V, 3-Pin TO-252GE, Surface
- RS-stocknr.:
- 265-325P
- Fabrikantnummer:
- RGT8BM65DGTL1
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 100 eenheden (geleverd op een doorlopende strip)*
€ 125,40
(excl. BTW)
€ 151,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 2.490 stuk(s) vanaf 12 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 100 - 240 | € 1,254 |
| 250 + | € 1,162 |
*prijsindicatie
- RS-stocknr.:
- 265-325P
- Fabrikantnummer:
- RGT8BM65DGTL1
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Maximum Continuous Collector Current Ic | 8A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 62W | |
| Package Type | TO-252GE | |
| Mount Type | Surface | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | RFN | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Maximum Continuous Collector Current Ic 8A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 62W | ||
Package Type TO-252GE | ||
Mount Type Surface | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Series RFN | ||
Automotive Standard No | ||
The ROHM IGBT contribute to energy saving high efficiency and a wide range of high voltage and high current applications. The IGBT features a low collector to emitter saturation voltage, making it highly efficient for various applications. It offers a short circuit withstand time of 5 microseconds, ensuring robust performance under fault conditions. Additionally, it is equipped with a built in very fast and soft recovery fast recovery diode from the RFN series.
Low Switching Loss
Pb free lead plating
RoHS compliant