ROHM RGTV00TS65DGC13, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-247GE, Through Hole
- RS-stocknr.:
- 265-328
- Fabrikantnummer:
- RGTV00TS65DGC13
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 eenheid)*
€ 6,84
(excl. BTW)
€ 8,28
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 120 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 6,84 |
| 10 - 99 | € 6,14 |
| 100 - 499 | € 5,69 |
| 500 - 999 | € 5,28 |
| 1000 + | € 4,72 |
*prijsindicatie
- RS-stocknr.:
- 265-328
- Fabrikantnummer:
- RGTV00TS65DGC13
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 276W | |
| Package Type | TO-247GE | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | 40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 276W | ||
Package Type TO-247GE | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature 40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 650V 50A Field Stop Trench IGBT is designed for high performance applications, featuring a low collector emitter saturation voltage that enhances efficiency. It offers high speed switching capabilities with low switching loss, making it ideal for applications requiring rapid transitions. Additionally, this IGBT has a short circuit withstand time of 2 microseconds, providing robust protection and reliability in demanding environments.
Pb free lead plating
RoHS compliant
Built in very fast and soft recovery FRD
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