ROHM RGTV60TS65DGC13, N-Channel IGBT, 60 A 650 V, 3-Pin TO-247GE, Through Hole
- RS-stocknr.:
- 265-330
- Fabrikantnummer:
- RGTV60TS65DGC13
- Fabrikant:
- ROHM
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 12,00
(excl. BTW)
€ 14,52
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Wordt opgeheven
- Laatste 62 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 6,00 | € 12,00 |
| 20 - 198 | € 5,40 | € 10,80 |
| 200 - 998 | € 4,98 | € 9,96 |
| 1000 - 1998 | € 4,62 | € 9,24 |
| 2000 + | € 4,14 | € 8,28 |
*prijsindicatie
- RS-stocknr.:
- 265-330
- Fabrikantnummer:
- RGTV60TS65DGC13
- Fabrikant:
- ROHM
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | ROHM | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 60A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 194W | |
| Package Type | TO-247GE | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk ROHM | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 60A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 194W | ||
Package Type TO-247GE | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM IGBT features a low collector emitter saturation voltage, making it highly suitable for applications such as Power Factor Correction, solar inverters, uninterruptible power supplies, welding and induction heating. It offers high speed switching capabilities with low switching loss, enhancing overall efficiency. Additionally, it has a short circuit withstand time of 2 microseconds, ensuring reliable performance and protection under fault conditions in demanding environments.
Pb free lead plating
RoHS compliant
Built in very fast and soft recovery FRD
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