Infineon IKY75N120CH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 75 A 1200 V, 4-Pin
- RS-stocknr.:
- 285-027
- Fabrikantnummer:
- IKY75N120CH7XKSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 11,31
(excl. BTW)
€ 13,69
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 11,31 |
*prijsindicatie
- RS-stocknr.:
- 285-027
- Fabrikantnummer:
- IKY75N120CH7XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 75 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 549 W | |
| Number of Transistors | 1 | |
| Package Type | PG-TO247-4-PLUS-NN5.1 | |
| Configuration | Single Collector, Single Emitter, Single Gate | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 4 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 75 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 549 W | ||
Number of Transistors 1 | ||
Package Type PG-TO247-4-PLUS-NN5.1 | ||
Configuration Single Collector, Single Emitter, Single Gate | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 4 | ||
The Infineon IGBT features an advanced high speed 1200V TRENCHSTOP IGBT 7 technology device delivers exceptional performance, optimised for high efficiency in challenging applications such as industrial UPS, EV charging, and welding. Designed to cope with a maximum junction temperature of 175°C, this component ensures minimal energy loss and improved thermal management, thus prolonging operational lifespan. Its robust construction includes lead free plating, adhering to RoHS compliance, ensuring environmental responsibility. With highly efficient current handling capabilities of up to 75A, this IGBT is developed to perform under demanding conditions while promoting enhanced system efficiency.
High speed switching enhances performance
Optimized for efficient hard switching
Built in rapid recovery diode improves reliability
Pb free lead plating meets environmental standards
Handles high junction temperatures for durability
User friendly design enables easy paralleling
Optimized for efficient hard switching
Built in rapid recovery diode improves reliability
Pb free lead plating meets environmental standards
Handles high junction temperatures for durability
User friendly design enables easy paralleling
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