STMicroelectronics STGIF7CH60TS-LZ 3 Phase IGBT, 10 A 600 V, 26-Pin SDIP2F-26L Type L, Surface
- RS-stocknr.:
- 330-469
- Fabrikantnummer:
- STGIF7CH60TS-LZ
- Fabrikant:
- STMicroelectronics
Momenteel niet beschikbaar
We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
- RS-stocknr.:
- 330-469
- Fabrikantnummer:
- STGIF7CH60TS-LZ
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 66W | |
| Number of Transistors | 6 | |
| Package Type | SDIP2F-26L Type L | |
| Configuration | 3 Phase | |
| Mount Type | Surface | |
| Pin Count | 26 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | UL 1434, File E81734, CA 4 recognised, UL 1557 | |
| Length | 38mm | |
| Height | 3.5mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 66W | ||
Number of Transistors 6 | ||
Package Type SDIP2F-26L Type L | ||
Configuration 3 Phase | ||
Mount Type Surface | ||
Pin Count 26 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals UL 1434, File E81734, CA 4 recognised, UL 1557 | ||
Length 38mm | ||
Height 3.5mm | ||
Automotive Standard No | ||
Vrijgesteld
- Land van herkomst:
- CN
The STMicroelectronics IPM 10 A, 600 V, 3-phase IGBT inverter bridge with 2 control ICs for gate driving and freewheeling diodes. It features 3.3 V, 5 V TTL/CMOS inputs with hysteresis and an internal bootstrap diode.
Undervoltage lockout of gate drivers
Smart shutdown function
Short-circuit protection
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