Infineon FS1150R08A8P3LMCHPSA1, Type N-Channel Half Bridge IGBT, 600 A 750 V, Screw
- RS-stocknr.:
- 349-029
- Fabrikantnummer:
- FS1150R08A8P3LMCHPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 609,71
(excl. BTW)
€ 737,75
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 07 december 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 609,71 |
*prijsindicatie
- RS-stocknr.:
- 349-029
- Fabrikantnummer:
- FS1150R08A8P3LMCHPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 600A | |
| Maximum Collector Emitter Voltage Vceo | 750V | |
| Maximum Power Dissipation Pd | 1kW | |
| Number of Transistors | 6 | |
| Configuration | Half Bridge | |
| Mount Type | Screw | |
| Channel Type | Type N | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.22V | |
| Maximum Operating Temperature | 185°C | |
| Standards/Approvals | RoHS, UL 94 V0 | |
| Automotive Standard | AQG 324 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 600A | ||
Maximum Collector Emitter Voltage Vceo 750V | ||
Maximum Power Dissipation Pd 1kW | ||
Number of Transistors 6 | ||
Configuration Half Bridge | ||
Mount Type Screw | ||
Channel Type Type N | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.22V | ||
Maximum Operating Temperature 185°C | ||
Standards/Approvals RoHS, UL 94 V0 | ||
Automotive Standard AQG 324 | ||
- Land van herkomst:
- DE
The Infineon HybridPACK Drive G2 module is a very compact six pack power module with enhanced package optimized for hybrid and electric vehicles. The power module implements Infineon’s next generation chip technology EDT3 750V, optimized for electric drive train applications, from mid to high range automotive power classes.
Low inductive design
4.2 kV DC 1 second insulation
High creepage and clearance distances
Direct cooled PinFin base plate
PCB and cooler assembly guidelines
PressFIT contact technology
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