Starpower GD900HFY120P1S, N-Channel Dual IGBT Module, 1522 A 1200 V, 9-Pin Module
- RS-stocknr.:
- 427-724
- Fabrikantnummer:
- GD900HFY120P1S
- Fabrikant:
- Starpower
Subtotaal (1 eenheid)*
€ 330,68
(excl. BTW)
€ 400,12
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 9 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 1 + | € 330,68 |
*prijsindicatie
- RS-stocknr.:
- 427-724
- Fabrikantnummer:
- GD900HFY120P1S
- Fabrikant:
- Starpower
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Starpower | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 1522A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 5.24kW | |
| Configuration | Dual | |
| Package Type | Module | |
| Channel Type | N | |
| Pin Count | 9 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Starpower | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 1522A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 5.24kW | ||
Configuration Dual | ||
Package Type Module | ||
Channel Type N | ||
Pin Count 9 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Starpower IGBT Power Module provides ultralow conduction loss as well as short circuit ruggedness. They are designed for the applications such as electric vehicle and solar power.
VCE(sat) with positive temperature coefficient
Maximum junction temperature 175°C
Low inductance case
Isolated copper baseplate using DBC technology
High power and thermal cycling capability
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