Starpower DG75A08TDFQ IGBT Discrete, 100 A, 4-Pin TO-247PLUS-4L
- RS-stocknr.:
- 427-754
- Fabrikantnummer:
- DG75A08TDFQ
- Fabrikant:
- Starpower
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,54
(excl. BTW)
€ 9,12
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 30 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 3,77 | € 7,54 |
| 20 - 198 | € 3,395 | € 6,79 |
| 200 - 998 | € 3,13 | € 6,26 |
| 1000 - 1998 | € 2,905 | € 5,81 |
| 2000 + | € 2,385 | € 4,77 |
*prijsindicatie
- RS-stocknr.:
- 427-754
- Fabrikantnummer:
- DG75A08TDFQ
- Fabrikant:
- Starpower
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Starpower | |
| Product Type | IGBT Discrete | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Power Dissipation Pd | 378W | |
| Package Type | TO-247PLUS-4L | |
| Pin Count | 4 | |
| Switching Speed | 30ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | DOSEMI | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Starpower | ||
Product Type IGBT Discrete | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Power Dissipation Pd 378W | ||
Package Type TO-247PLUS-4L | ||
Pin Count 4 | ||
Switching Speed 30ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series DOSEMI | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Starpower IGBT Power Discrete provides ultralow conduction loss as well as low switching loss. They are designed for the applications such as solar power.
Low switching loss
Maximum junction temperature 175°C
VCE(sat) with positive temperature coefficient
Very low reverse recovery loss based on SiC diode
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