Starpower GD150MLX65L3S, Type N-Channel IGBT, 223 A 650 V, Panel
- RS-stocknr.:
- 433-241
- Fabrikantnummer:
- GD150MLX65L3S
- Fabrikant:
- Starpower
Subtotaal (1 doos van 16 eenheden)*
€ 994,816
(excl. BTW)
€ 1.203,728
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 15 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per Doos* |
|---|---|---|
| 16 + | € 62,176 | € 994,82 |
*prijsindicatie
- RS-stocknr.:
- 433-241
- Fabrikantnummer:
- GD150MLX65L3S
- Fabrikant:
- Starpower
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Starpower | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 223A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 600W | |
| Mount Type | Panel | |
| Channel Type | Type N | |
| Switching Speed | 6μs | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.9V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Starpower | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 223A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 600W | ||
Mount Type Panel | ||
Channel Type Type N | ||
Switching Speed 6μs | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.9V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Starpower IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as 3-level-application.
Low switching loss
6μs short circuit capability
VCE(sat) with positive temperature coefficient
Fast and soft reverse recovery anti parallel FWD
Low inductance case
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