Infineon IKW30N60H3FKSA1, Type N-Channel IGBT, 30 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 110-7756
- Fabrikantnummer:
- IKW30N60H3FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 9,192
(excl. BTW)
€ 11,124
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 44 stuk(s) klaar voor verzending vanaf een andere locatie
- Plus verzending 200 stuk(s) vanaf 09 juni 2026
- Plus verzending 240 stuk(s) vanaf 10 juni 2027
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 4 - 16 | € 2,298 | € 9,19 |
| 20 - 96 | € 1,76 | € 7,04 |
| 100 - 196 | € 1,525 | € 6,10 |
| 200 - 496 | € 1,44 | € 5,76 |
| 500 + | € 1,413 | € 5,65 |
*prijsindicatie
- RS-stocknr.:
- 110-7756
- Fabrikantnummer:
- IKW30N60H3FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 187W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC, RoHS, Pb-free lead plating | |
| Series | High speed switching third generation | |
| Automotive Standard | No | |
| Energy Rating | 1.72mJ | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 187W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC, RoHS, Pb-free lead plating | ||
Series High speed switching third generation | ||
Automotive Standard No | ||
Energy Rating 1.72mJ | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.