Infineon FF200R12KT4HOSA1, Type N-Channel IGBT Module, 320 A 1200 V, 3-Pin 62 mm Module, Clamp
- RS-stocknr.:
- 124-9046
- Fabrikantnummer:
- FF200R12KT4HOSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 939,62
(excl. BTW)
€ 1.136,94
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- Verzending 10 stuk(s) vanaf 12 november 2026
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Aantal stuks | Per stuk | Per Doos* |
|---|---|---|
| 10 - 10 | € 93,962 | € 939,62 |
| 20 + | € 91,332 | € 913,32 |
*prijsindicatie
- RS-stocknr.:
- 124-9046
- Fabrikantnummer:
- FF200R12KT4HOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 320A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 1100W | |
| Package Type | 62 mm Module | |
| Mount Type | Clamp | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | 62mmC | |
| Width | 61.4mm | |
| Length | 106.4mm | |
| Height | 30.9mm | |
| Standards/Approvals | EN 61140 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 320A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 1100W | ||
Package Type 62 mm Module | ||
Mount Type Clamp | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series 62mmC | ||
Width 61.4mm | ||
Length 106.4mm | ||
Height 30.9mm | ||
Standards/Approvals EN 61140 | ||
Automotive Standard No | ||
Infineon 62mmC Series IGBT Module, 1200V Max Collector Emitter Voltage, 320A Max Continuous Collector Current - FF200R12KT4HOSA1
This IGBT module is a compact power switching device designed for high-voltage, high-current semiconductor applications. It operates across a wide ambient range and is intended for mounting with a clamp system, providing a robust solution for power conversion and control tasks in demanding environments.
Features and Benefits:
• 1200V collector-emitter rating enabling high-voltage switching capability
• 320A continuous collector current for heavy current handling
• VCE(sat) 2.15V yielding efficient conduction under load
• 1100W maximum power dissipation supporting sustained power operation
• -40°C to 150°C operating range allowing extreme-temperature deployment
• 3-pin N-channel configuration simplifying gate and terminal connections
• 320A continuous collector current for heavy current handling
• VCE(sat) 2.15V yielding efficient conduction under load
• 1100W maximum power dissipation supporting sustained power operation
• -40°C to 150°C operating range allowing extreme-temperature deployment
• 3-pin N-channel configuration simplifying gate and terminal connections
Applications
• Suitable for industrial motor drive inverter stages
• Ideal for renewable energy converters and inverters
• Used with high-power switching assemblies in traction systems
• Can be used for power supplies requiring high current throughput
• Suitable for laboratory power electronics test benches
• Ideal for renewable energy converters and inverters
• Used with high-power switching assemblies in traction systems
• Can be used for power supplies requiring high current throughput
• Suitable for laboratory power electronics test benches
What mounting method is required for installation?
It is designed for clamp mounting, which secures the module mechanically and establishes thermal contact to an external heat sink.
How many electrical terminals are provided for connections?
The device has three pins, accommodating gate, collector and emitter connections in an N-channel layout.
What gate voltage limits must be observed during use?
The maximum permissible gate-emitter voltage is 20V and should not be exceeded to prevent device damage.
Are automotive approval standards applicable for system selection?
It does not carry automotive standard certification and should be evaluated accordingly for vehicle applications.
