- RS-stocknr.:
- 146-1729
- Fabrikantnummer:
- IXGH48N60B3
- Fabrikant:
- IXYS
60 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (in eentube van 60)
€ 8,359
(excl. BTW)
€ 10,114
(incl. BTW)
Aantal stuks | Per stuk | Per tube* |
60 + | € 8,359 | € 501,54 |
*prijsindicatie |
- RS-stocknr.:
- 146-1729
- Fabrikantnummer:
- IXGH48N60B3
- Fabrikant:
- IXYS
Wetgeving en compliance
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 280 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 300 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 40kHz |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |