IXYS IXGH48N60B3, Type N-Channel IGBT, 48 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 791-7416
- Fabrikantnummer:
- IXGH48N60B3
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 17,43
(excl. BTW)
€ 21,09
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 32 stuk(s) vanaf 23 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 8,715 | € 17,43 |
| 10 - 28 | € 7,035 | € 14,07 |
| 30 - 58 | € 6,275 | € 12,55 |
| 60 - 118 | € 5,755 | € 11,51 |
| 120 + | € 5,225 | € 10,45 |
*prijsindicatie
- RS-stocknr.:
- 791-7416
- Fabrikantnummer:
- IXGH48N60B3
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 48A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 300W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 40kHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Length | 20.32mm | |
| Series | GenX3TM 600V IGBT | |
| Width | 16.26 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 48A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 300W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 40kHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Operating Temperature 150°C | ||
Length 20.32mm | ||
Series GenX3TM 600V IGBT | ||
Width 16.26 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.