IXYS IXYH30N170C, Type N-Channel IGBT, 100 A 1700 V, 3-Pin TO-247AD, Through Hole
- RS-stocknr.:
- 146-4252
- Fabrikantnummer:
- IXYH30N170C
- Fabrikant:
- IXYS
Subtotaal (1 tube van 30 eenheden)*
€ 511,92
(excl. BTW)
€ 619,41
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 april 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 17,064 | € 511,92 |
*prijsindicatie
- RS-stocknr.:
- 146-4252
- Fabrikantnummer:
- IXYH30N170C
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Maximum Continuous Collector Current Ic | 100A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1700V | |
| Maximum Power Dissipation Pd | 937W | |
| Package Type | TO-247AD | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | High Voltage | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Maximum Continuous Collector Current Ic 100A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1700V | ||
Maximum Power Dissipation Pd 937W | ||
Package Type TO-247AD | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series High Voltage | ||
Automotive Standard No | ||
IXYS XPT (eXtreme-light Punch Through) IGBTs with current ratings ranging from 29A to 178A, are well-suited for high-voltage, high-speed power conversion applications. Designed using the proprietary thin-wafer XPT technology and the state-of-the-art IGBT process, these devices display such qualities as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Also, thanks to the positive temperature coefficient of their on-state voltage, the new high-voltage IGBTs can be used in parallel, which provides cost-effective solutions compared to series-connected, lower-voltage device ones.
Thin wafer XPT technology
Low on-state voltages VCE(sat)
Co-packed fast recovery diodes
Positive temperature coefficient of VCE(sat)
High efficiency
Increased reliability of power systems
Applications
Pulser circuits
Laser and X-ray generators
High-voltage power supplies
High-voltage test equipment
Capacitor discharge circuits
AC switches
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