STMicroelectronics, Type N-Channel IGBT, 25 A 450 V, 3-Pin TO-263, Surface
- RS-stocknr.:
- 164-7013P
- Fabrikantnummer:
- STGB20N45LZAG
- Fabrikant:
- STMicroelectronics
Subtotaal 5 eenheden (geleverd op een doorlopende strip)*
€ 13,01
(excl. BTW)
€ 15,74
(incl. BTW)
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Aantal stuks | Per stuk |
|---|---|
| 5 + | € 2,602 |
*prijsindicatie
- RS-stocknr.:
- 164-7013P
- Fabrikantnummer:
- STGB20N45LZAG
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 25A | |
| Maximum Collector Emitter Voltage Vceo | 450V | |
| Maximum Power Dissipation Pd | 150W | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 8.4μs | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 16 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.55V | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.6mm | |
| Length | 10.4mm | |
| Standards/Approvals | AEC-Q101 | |
| Series | Automotive Grade | |
| Energy Rating | 300mJ | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 25A | ||
Maximum Collector Emitter Voltage Vceo 450V | ||
Maximum Power Dissipation Pd 150W | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 8.4μs | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 16 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.55V | ||
Maximum Operating Temperature 175°C | ||
Height 4.6mm | ||
Length 10.4mm | ||
Standards/Approvals AEC-Q101 | ||
Series Automotive Grade | ||
Energy Rating 300mJ | ||
Automotive Standard AEC-Q101 | ||
This application-specific IGBT utilizes the most Advanced PowerMESH™ technology optimized for Coil driving in the harsh environment of automotive ignition systems. These devices show very low on-state voltage and very high SCIS energy capability over a wide operating temperature range. Moreover, ESD-protected logic level gate input and an integrated gate resistor means no external protection circuitry is required
SCIS energy of 300 mJ @ TJ = 25 °C
Parts are 100% tested in SCIS
ESD gate-emitter protection
Gate-collector high voltage clamping
Logic level gate drive
Very low saturation voltage
High pulsed current capability
Gate and gate-emitter resistor