STMicroelectronics STGB20N40LZ IGBT, 25 A 425 V, 3-Pin D2PAK (TO-263), Surface Mount
- RS-stocknr.:
- 165-6551
- Fabrikantnummer:
- STGB20N40LZ
- Fabrikant:
- STMicroelectronics
Subtotaal (1 rol van 1000 eenheden)*
€ 1.080,00
(excl. BTW)
€ 1.310,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 1,08 | € 1.080,00 |
*prijsindicatie
- RS-stocknr.:
- 165-6551
- Fabrikantnummer:
- STGB20N40LZ
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current | 25 A | |
| Maximum Collector Emitter Voltage | 425 V | |
| Maximum Gate Emitter Voltage | 16V | |
| Maximum Power Dissipation | 150 W | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 10.4 x 9.35 x 4.6mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current 25 A | ||
Maximum Collector Emitter Voltage 425 V | ||
Maximum Gate Emitter Voltage 16V | ||
Maximum Power Dissipation 150 W | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 10.4 x 9.35 x 4.6mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
- Land van herkomst:
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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