Infineon IRG4RC10UDPBF IGBT, 8.5 A 600 V, 3-Pin DPAK (TO-252), Surface Mount

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RS-stocknr.:
165-7555
Fabrikantnummer:
IRG4RC10UDPBF
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

8.5 A

Maximum Collector Emitter Voltage

600 V

Maximum Gate Emitter Voltage

±20V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Co-Pack IGBT up to 20A, Infineon


Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations


IGBT Transistors, International Rectifier


International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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