STMicroelectronics STGP5H60DF, Type N-Channel IGBT, 10 A 600 V, 3-Pin TO-220, Through Hole

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Subtotaal (1 tube van 50 eenheden)*

€ 40,90

(excl. BTW)

€ 49,50

(incl. BTW)

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Aantal stuks
Per stuk
Per tube*
50 - 50€ 0,818€ 40,90
100 - 200€ 0,778€ 38,90
250 - 450€ 0,737€ 36,85
500 - 700€ 0,696€ 34,80
750 +€ 0,655€ 32,75

*prijsindicatie

RS-stocknr.:
168-8940
Fabrikantnummer:
STGP5H60DF
Fabrikant:
STMicroelectronics
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Maximum Continuous Collector Current Ic

10A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

88W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.95V

Maximum Operating Temperature

175°C

Length

10.4mm

Width

4.6 mm

Height

9.15mm

Series

Trench Gate Field Stop

Standards/Approvals

No

Automotive Standard

No

Energy Rating

221mJ

Land van herkomst:
CN

IGBT Discretes, STMicroelectronics


IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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