STMicroelectronics STGW25S120DF3 IGBT, 50 A 1200 V, 3-Pin TO-247, Through Hole

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RS-stocknr.:
168-8942
Fabrikantnummer:
STGW25S120DF3
Fabrikant:
STMicroelectronics
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Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

1200 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

375 W

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

N

Pin Count

3

Transistor Configuration

Single

Dimensions

15.75 x 5.15 x 20.15mm

Gate Capacitance

1600pF

Energy Rating

4.88mJ

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Land van herkomst:
CN

IGBT Discretes, STMicroelectronics



IGBT Discretes & Modules, STMicroelectronics


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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