Infineon IHW20N135R5XKSA1, N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole

RS-stocknr.:: 215-6636
Fabrikantnummer:: IHW20N135R5XKSA1
Fabrikant:: Infineon

Infineon IHW20N135R5XKSA1, N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole

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RS-stocknr.:: 215-6636
Fabrikantnummer:: IHW20N135R5XKSA1
Fabrikant:: Infineon

Specificaties

Datasheets

Wetgeving en compliance

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Alles selecteren	Attribuut	Waarde
	Merk	Infineon
	Product Type	IGBT Single Transistor IC
	Maximum Continuous Collector Current Ic	40A
	Maximum Collector Emitter Voltage Vceo	1350V
	Maximum Power Dissipation Pd	310W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	N
	Pin Count	3
	Maximum Gate Emitter Voltage VGEO	±25 V
	Minimum Operating Temperature	-40°C
	Maximum Collector Emitter Saturation Voltage VceSAT	1.85V
	Maximum Operating Temperature	175°C
	Series	Resonant Switching
	Width	16.13mm
	Standards/Approvals	IEC61249-2-21, RoHS
	Height	5.21mm
	Length	42mm
	Automotive Standard	No

	Alles selecteren
	Merk Infineon
	Product Type IGBT Single Transistor IC
	Maximum Continuous Collector Current Ic 40A
	Maximum Collector Emitter Voltage Vceo 1350V
	Maximum Power Dissipation Pd 310W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type N
	Pin Count 3
	Maximum Gate Emitter Voltage VGEO ±25 V
	Minimum Operating Temperature -40°C
	Maximum Collector Emitter Saturation Voltage VceSAT 1.85V
	Maximum Operating Temperature 175°C
	Series Resonant Switching
	Width 16.13mm
	Standards/Approvals IEC61249-2-21, RoHS
	Height 5.21mm
	Length 42mm
	Automotive Standard No

Datasheet-IHW20N135R5XKSA1

Infineon Resonant Switching Series IGBT Single Transistor IC, 1350V Max Collector Emitter Voltage, 40A Max Continuous Collector Current - IHW20N135R5XKSA1

This IGBT single-transistor IC is a high-voltage switching device designed for power-conversion environments where robust collector-emitter performance is required. It operates across an extended temperature span suitable for demanding thermal conditions and is supplied in a through-hole TO-247 package for conventional board mounting. The device targets resonant switching applications requiring substantial continuous current handling and low saturation during conduction.

Features and Benefits:

• 1350V collector-emitter rating enables high-voltage operation
• 40A continuous collector current supports heavy load currents
• 1.85V VCE(sat) reduces conduction losses under load
• ±25V gate-emitter tolerance allows wide drive voltages
• 310W power dissipation permits high-power switching
• -40 to 175 °C operational range sustains extreme temperatures

Applications

• Suitable for resonant converters in power supplies
• Ideal for industrial motor drive inverter stages
• Used with high-voltage switch-mode power supplies
• Can be used for utility-grade power conversion modules
• Suitable for high-power DC-DC converter topologies

What mounting approach does this device require?

It is supplied in a TO-247 through-hole package intended for soldered board mounting and heat-sinking through the package tab.

How does the transistor manage heat in continuous operation?

The maximum power dissipation rating of 310W defines the thermal load it can handle when fitted to an appropriate thermal path such as a heat sink and correct airflow.

What gate-drive constraints must be observed?

The gate-emitter voltage must be kept within ±25V to avoid gate insulation stress and ensure reliable switching.

Are there material or regulatory restrictions relevant to design?

The device conforms to RoHS requirements and is manufactured using materials meeting IEC 61249-2-21 standards for certain substrate compositions.