Infineon IHW20N135R5XKSA1, Type N-Channel IGBT Single Transistor IC, 40 A 1350 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 215-6636
- Fabrikantnummer:
- IHW20N135R5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 15,90
(excl. BTW)
€ 19,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending 240 stuk(s) vanaf 25 maart 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,18 | € 15,90 |
| 25 - 45 | € 2,864 | € 14,32 |
| 50 - 120 | € 2,672 | € 13,36 |
| 125 - 245 | € 2,512 | € 12,56 |
| 250 + | € 2,32 | € 11,60 |
*prijsindicatie
- RS-stocknr.:
- 215-6636
- Fabrikantnummer:
- IHW20N135R5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 1350V | |
| Maximum Power Dissipation Pd | 310W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.85V | |
| Maximum Operating Temperature | 175°C | |
| Length | 42mm | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Height | 5.21mm | |
| Series | Resonant Switching | |
| Width | 16.13 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 1350V | ||
Maximum Power Dissipation Pd 310W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.85V | ||
Maximum Operating Temperature 175°C | ||
Length 42mm | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Height 5.21mm | ||
Series Resonant Switching | ||
Width 16.13 mm | ||
Automotive Standard No | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode offers high breakdown voltage of 1350v.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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