Infineon, Type N-Channel IGBT Single Transistor IC, 74 A 650 V, 3-Pin TO-247, Surface
- RS-stocknr.:
- 215-6652
- Fabrikantnummer:
- IKB40N65EH5ATMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 1.380,00
(excl. BTW)
€ 1.670,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 1,38 | € 1.380,00 |
*prijsindicatie
- RS-stocknr.:
- 215-6652
- Fabrikantnummer:
- IKB40N65EH5ATMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 74A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-247 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | High Speed Fifth Generation | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 74A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-247 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series High Speed Fifth Generation | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon high speed switching insulated-gate bipolar transistor copacked with full rated current rapid 1 antiparallel diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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