Infineon, Type N-Channel Reverse Conducting IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 215-6645
- Fabrikantnummer:
- IHW50N65R5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 30 eenheden)*
€ 53,28
(excl. BTW)
€ 64,47
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 19 oktober 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 30 | € 1,776 | € 53,28 |
| 60 - 120 | € 1,687 | € 50,61 |
| 150 - 270 | € 1,616 | € 48,48 |
| 300 - 570 | € 1,545 | € 46,35 |
| 600 + | € 1,438 | € 43,14 |
*prijsindicatie
- RS-stocknr.:
- 215-6645
- Fabrikantnummer:
- IHW50N65R5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Reverse Conducting IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 282W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Maximum Operating Temperature | 175°C | |
| Series | Resonant Switching | |
| Standards/Approvals | Pb-free lead plating, RoHS, JESD-022 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Reverse Conducting IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 282W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Maximum Operating Temperature 175°C | ||
Series Resonant Switching | ||
Standards/Approvals Pb-free lead plating, RoHS, JESD-022 | ||
Automotive Standard No | ||
The Infineon reverse conducting insulated-gate bipolar transistor with monolithic body diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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