Infineon IGW75N65H5XKSA1, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 218-4392
- Fabrikantnummer:
- IGW75N65H5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 22,02
(excl. BTW)
€ 26,645
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 90 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 4,404 | € 22,02 |
| 10 - 20 | € 3,83 | € 19,15 |
| 25 - 45 | € 3,566 | € 17,83 |
| 50 - 120 | € 3,302 | € 16,51 |
| 125 + | € 3,084 | € 15,42 |
*prijsindicatie
- RS-stocknr.:
- 218-4392
- Fabrikantnummer:
- IGW75N65H5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 198W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Standards/Approvals | JEDEC, RoHS | |
| Height | 5.21mm | |
| Series | IGW75N65H5 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 198W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Standards/Approvals JEDEC, RoHS | ||
Height 5.21mm | ||
Series IGW75N65H5 | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 120 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient