Infineon IGW75N65H5XKSA1, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 218-4392
- Fabrikantnummer:
- IGW75N65H5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 22,02
(excl. BTW)
€ 26,645
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- 90 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 5 | € 4,404 | € 22,02 |
| 10 - 20 | € 3,83 | € 19,15 |
| 25 - 45 | € 3,566 | € 17,83 |
| 50 - 120 | € 3,302 | € 16,51 |
| 125 + | € 3,084 | € 15,42 |
*prijsindicatie
- RS-stocknr.:
- 218-4392
- Fabrikantnummer:
- IGW75N65H5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation Pd | 198W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 21.1mm | |
| Width | 16.13 mm | |
| Height | 5.21mm | |
| Series | IGW75N65H5 | |
| Standards/Approvals | JEDEC, RoHS | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation Pd 198W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 21.1mm | ||
Width 16.13 mm | ||
Height 5.21mm | ||
Series IGW75N65H5 | ||
Standards/Approvals JEDEC, RoHS | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP IGBT5 technology redefines best-in-class IGBT resulting in lower junction and case temperature leading to higher device reliability by providing unmatched performance in terms of efficiency for hard switching applications. It has collector emitter voltage of 650 V and collector current of 120 A.
Higher power density design
50V increase in the bus voltage possible without compromising reliability
Mild positive temperature coefficient
Gerelateerde Links
- Infineon IGW75N65H5XKSA1 IGBT 3-Pin TO-247
- Infineon IKW75N65EL5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon 75 A 650 V Through Hole
- Infineon IKZ75N65EH5XKSA1 75 A 650 V Through Hole
- onsemi AFGHL75T65SQDC IGBT 3-Pin TO-247
- onsemi AFGHL75T65SQ IGBT 3-Pin TO-247
- Infineon IHW40N65R5XKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IGW50N65H5FKSA1 IGBT 3-Pin TO-247, Through Hole