Infineon IKW75N65EL5XKSA1, Type N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 110-7176
- Fabrikantnummer:
- IKW75N65EL5XKSA1
- Fabrikant:
- Infineon
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€ 17,218
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 7,115 | € 14,23 |
| 10 - 18 | € 6,76 | € 13,52 |
| 20 - 48 | € 6,48 | € 12,96 |
| 50 - 98 | € 6,19 | € 12,38 |
| 100 + | € 5,77 | € 11,54 |
*prijsindicatie
- RS-stocknr.:
- 110-7176
- Fabrikantnummer:
- IKW75N65EL5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 536W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 16.13mm | |
| Standards/Approvals | RoHS | |
| Series | TrenchStop | |
| Height | 5.21mm | |
| Energy Rating | 7.22mJ | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 536W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Length 16.13mm | ||
Standards/Approvals RoHS | ||
Series TrenchStop | ||
Height 5.21mm | ||
Energy Rating 7.22mJ | ||
Automotive Standard No | ||
Infineon TrenchStop Series IGBT, 650V Max Collector Emitter Voltage, 75A Max Continuous Collector Current - IKW75N65EL5XKSA1
This IGBT is a high-voltage switching transistor designed for power conversion and control in demanding industrial environments. It operates across an extended temperature range and is supplied in a through-hole TO-247 package for straightforward mounting and heatsink attachment. The device suits applications requiring high collector current handling and efficient switching with low saturation losses.
Features and Benefits:
• 650V blocking capability supports high-voltage switching
• 75A continuous collector current enables high-current operation
• 1.35V low Vce(sat) reduces conduction losses
• 536W maximum power dissipation permits elevated thermal loading
• 20V gate-emitter rating allows robust gate drive margins
• 7.22 mJ energy rating accommodates high-energy switching events
• 75A continuous collector current enables high-current operation
• 1.35V low Vce(sat) reduces conduction losses
• 536W maximum power dissipation permits elevated thermal loading
• 20V gate-emitter rating allows robust gate drive margins
• 7.22 mJ energy rating accommodates high-energy switching events
Applications
• Suitable for industrial motor-drive inverters
• Used with power supplies in uninterruptible systems
• Ideal for high-power converters and UPS units
• Can be used for induction heating and welding power stages
• Suitable for renewable-energy inverter power sections
• Used with power supplies in uninterruptible systems
• Ideal for high-power converters and UPS units
• Can be used for induction heating and welding power stages
• Suitable for renewable-energy inverter power sections
What mounting format does it require for thermal management?
It is supplied in a TO-247 through-hole package, allowing direct attachment to standard heatsinks and using conventional screw mounting for efficient heat transfer.
What environmental extremes can it withstand during operation?
The device is specified to operate from -40 °C up to 175 °C, enabling use in harsh thermal environments and elevated junction temperatures.
What gate drive limitations should be observed?
The maximum permissible gate-emitter voltage is 20V, so gate drivers must remain within this range to prevent gate-oxide stress.
Is this component suited for automotive-grade deployments?
It is RoHS-compliant but is not classified as an automotive-standard device, so it should be evaluated against vehicle-specific requirements before use.