Infineon IHW40N65R6XKSA1, Type N-Channel IGBT, 83 A 650 V, 3-Pin PG-TO-247, Surface
- RS-stocknr.:
- 225-0574
- Fabrikantnummer:
- IHW40N65R6XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 13,98
(excl. BTW)
€ 16,915
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
- Plus verzending 30 stuk(s) vanaf 16 maart 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 2,796 | € 13,98 |
| 25 - 45 | € 2,516 | € 12,58 |
| 50 - 120 | € 2,348 | € 11,74 |
| 125 - 245 | € 2,182 | € 10,91 |
| 250 + | € 2,014 | € 10,07 |
*prijsindicatie
- RS-stocknr.:
- 225-0574
- Fabrikantnummer:
- IHW40N65R6XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 83A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 210W | |
| Package Type | PG-TO-247 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.3mm | |
| Series | TrenchStop | |
| Length | 16.3mm | |
| Standards/Approvals | RoHS | |
| Width | 21.5 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 83A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 210W | ||
Package Type PG-TO-247 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.3mm | ||
Series TrenchStop | ||
Length 16.3mm | ||
Standards/Approvals RoHS | ||
Width 21.5 mm | ||
Automotive Standard No | ||
The Infineon IHW40N65R6 is the 650 V, 40 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.
Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C
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