Infineon CoolSiC Type N-Channel MOSFET, 83 A, 650 V Enhancement, 3-Pin PG-TO-247 IMW65R020M2HXKSA1

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RS-stocknr.:
349-063
Fabrikantnummer:
IMW65R020M2HXKSA1
Fabrikant:
Infineon
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Merk

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

83A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TO-247

Series

CoolSiC

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

57nC

Maximum Power Dissipation Pd

273W

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon CoolSiC MOSFET 650 V G2 is built on Infineon’s robust 2nd generation Silicon Carbide trench technology, offering unparalleled performance, superior reliability, and excellent ease of use. This MOSFET is designed to enable cost effective, highly efficient, and simplified designs, addressing the ever-growing demands of modern power systems and markets. It is an ideal solution for achieving high system efficiency in a wide range of applications, delivering reliable performance and superior functionality.

Ultra low switching losses

Robust against parasitic turn on even with 0 V turn off gate voltage

Flexible driving voltage and compatible with bipolar driving scheme

Robust body diode operation under hard commutation events

The .XT interconnection technology for best in class thermal performance

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